Si7905DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
(25 °C, unless otherwise noted)
3.0
V GS = 10 thr u 5 V
V GS = 4 V
2.4
15
1. 8
10
1.2
T C = 25 °C
5
V GS = 3 V
0.6
T C = 125 °C
0
V GS = 2 V
0.0
T C = - 55 °C
0.0
0.6
1.2
1. 8
2.4
3.0
0
1
2
3
4
0.12
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
1500
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
1200
0.09
V GS = 4.5 V
900
C iss
0.06
V GS = 10 V
600
0.03
300
C oss
C rss
0.00
0
0
5
10
15
20
0
8
16
24
32
40
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I D = 5 A
8
1. 8
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
V GS = 10 V , I D = 5 A
1.5
V DS = 20 V
6
1.2
4
V DS = 32 V
V GS = 4.5 V, I D = 4 A
0.9
2
0
0.6
0
4
8
12
16
20
- 50
- 25
0
25
50
75
100
125
150
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 69920
S11-2187-Rev. C, 07-Nov-11
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SI7913DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7922DN-T1-GE3 MOSFET DL N-CH 100V PPAK 1212-8
SI7923DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
SI7940DP-T1-E3 MOSFET 2N-CH 12V 7.6A 8SOIC
SI7945DP-T1-GE3 MOSFET DL P-CH 30V PPAK 8-SOIC
SI7948DP-T1-GE3 MOSFET N-CH DL 60V PWRPAK 8-SOIC
SI7956DP-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
SI7958DP-T1-GE3 MOSFET DL N-CH 40V PPAK 8-SOIC
相关代理商/技术参数
SI7905DN-T1-GE3 功能描述:MOSFET 40V 6.0A 20.8W 60mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7906 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7906A 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7908 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7908A 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7909 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7909DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET
SI7909DN-T1-E3 功能描述:MOSFET 12V 7.7A 2.8W 37mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube